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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1870 DESCRIPTION *With TO-3 package *High switching speed APPLICATIONS *For power switching applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION MAXIMUN RATINGS SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature Tmb25 Open emitter Open base Open collector CONDITIONS VALUE 300 250 7 10 3 100 150 -65~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 1.25 UNIT /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ; IB=0 IC=1mA ; IE=0 IE=1mA ; IC=0 IC=5A; IB=1A IC=5A; IB=1A VCB=300V; IE=0 VEB=7V; IC=0 IC=10A ; VCE=5V 15 MIN 250 300 7 2SC1870 TYP. MAX UNIT V V V 1.0 1.5 0.1 0.1 V V mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1870 Fig.2 Outline dimensions 3 |
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